schottky barrier diode RB520ZS8A30 l applications l dimensions (unit : mm) rectifying small power l features 1) ultra small mold type (hmd8) 2) halogen free l structure l construction silicon epitaxial planer l absolute maximum ratings (ta=25 ? c) symbol unit v r v io ma i fsm ma tj ? c tstg ? c pd mw/total l electrical characteristics (ta=25 ? c) symbol min. typ. max. unit conditions v f - - 0.46 v i f =10ma i r - - 0.3 a v r =10v l land size figure (unit : mm) l taping dimensions (unit : mm) parameter limits reverse voltage (dc) 30 average rectified forward current (*1) 100 forward current surge peak (60hz ? 1cyc.) (*2) 500 junction temperature 150 parameter forward voltage reverse current storage temperature - 55 to + 150 power dissipation 400 (*1)(*2)rating of per diode jedec : - rohm : hmd8 jeita : - dot (year week factory) 0.25 0.3 0.4 hmd8 a d 1/4 2011.11 - rev.a data sheet www.rohm.com ? 2011 rohm co., ltd. all rights reserved.
RB520ZS8A30 0.1 1 10 100 0 100 200 300 400 500 600 700 ta=150 c ta=125 c ta=75 c ta= - 25 c ta=25 c forward voltage v f (mv) v f - i f characteristics forward current:i f (ma) 0.1 1 10 100 1000 10000 100000 1000000 0 10 20 30 ta=150 c reverse current:i r (na) reverse voltage v r (v) v r - i r characteristics ta=125 c ta=75 c ta=25 c ta= - 25 c 1 10 0 10 20 30 capacitance between terminals:ct(pf) reverse voltage:v r (v) v r - ct characteristics f=1mh 380 390 400 410 420 430 v f dispersion map forward voltage:v f (mv) ave:405.7mv ta=25 c i f =10ma n=30pcs 0 10 20 30 40 50 60 70 80 90 100 reverse current:i r (na) i r dispersion map ta=25 c v r =10v n=30pcs ave:19.93na 0 5 10 15 20 25 30 35 40 45 50 ave:6.3pf ta=25 c f=1mhz v r =0v capacitance between terminals:ct(pf) ct dispersion map 2/4 2011.11 - rev.a www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet
RB520ZS8A30 0 5 10 15 20 25 30 ave:4.30a i fsm dispersion map peak surge forward current:i fsm (a) 8.3ms i fsm 0 1 2 3 4 5 6 7 8 9 10 ave:5.8ns tj=25 c i f =0.1a i r =0.1a irr=0.1 i r n=10pcs trr dispersion map reverse recovery time:trr(ns) 0 5 10 1 10 100 8.3ms i fsm 1cyc. 8.3ms peak surge forward current:i fsm (a) number of cycles i fsm - cycle characteristics 0 5 10 1 10 100 peak surge forward current:i fsm (a) time:t(ms) i fsm - t characteristics t i fsm 1 10 100 1000 0.001 0.01 0.1 1 10 100 1000 time:t(s) rth - t characteristics transient thermal impedance:rth ( c /w) 0 0.05 0.1 0.15 0 0.05 0.1 0.15 0.2 dc d=1/2 sin( 180) forward power dissipation:pf(w) average rectified forward current io(a) io - pf characteristics 3/4 2011.11 - rev.a www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet
RB520ZS8A30 0 0.001 0.002 0.003 0.004 0.005 0 10 20 30 reverse power dissipation:p r (w) reverse voltage:v r (v) v r - p r characteristics dc d=1/2 sin( 180) 0 5 10 15 20 25 30 ave:0.90kv ave:7.4kv c=100pf r=1.5k c=200pf r=0 electrostatic discharge test esd(kv) esd dispersion map 4/4 2011.11 - rev.a www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet
r 1 120 a ww w .rohm.com ? 20 1 1 rohm co., ltd. all rights reserved. notice rohm customer support system http://ww w . r ohm.com/contact/ thank you for your accessing to rohm p r oduct informations. mo r e detail p r oduct informations and catalogs a r e available, please contact us. notes
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